145 adams avenue hauppauge, ny 11788 usa tel: (631) 435-1110 fax: (631) 435-1824 www.centralsemi.com princip al device types cmpt7090l cxt7090l czt7090l cmxt7090l geometry process details r3 (23- august 2006) process epitaxial planar die size 41.3 x 41.3 mils die thickness 9.0 mils base bonding pad area 9.5 x 9.2 mils emitter bonding pad area 12.8 x 10.2 mils top side metalization al - 30,000? back side metalization au - 18,000? gross die per 4 inch w afer 6,670 process cp709 power transistor pnp - low saturation transistor chip
145 adams avenue hauppauge, ny 11788 usa tel: (631) 435-1110 fax: (631) 435-1824 www.centralsemi.com r3 (23- august 2006) process cp709 typical electrical characteristics
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